| 摘要 |
PROBLEM TO BE SOLVED: To provide a memory cell which improves the length control of a cell channel area and has a reduced size by forming the injection area of the bit line, etc., of a virtual grounded memory cell in a salicide area by injecting a dopant into the area at a low concentration. SOLUTION: A method for manufacturing an electronic memory cell device includes a step of forming a plurality of continuous strips which are separated from each other by a plurality of parallel openings 8 by forming the gate areas 4 of a memory cell, a step of forming second-conductivity bit lines 9 in the openings 8 by injecting a dopant, and a step of forming spacers 10 on the side walls of the gate areas 4. The method also includes a step of vapor-depositing first layers 11 of a transition metal in the openings 8, and a step of forming silicon compound layers 12 on the bit lines 9 by causing the transition metal layers 11 to react to a semiconductor substrate by performing heat treatment on the layers 11.
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