| 摘要 |
PROBLEM TO BE SOLVED: To prevent a semiconductor substrate surface and a gate insulating film surface from being contaminated and to normally form a new gate insulating film on the gate insulating film or semiconductor substrate surface, in a manufacturing method of a semiconductor device having gate insulating films which are mutually different in thickness. SOLUTION: This method has a process for forming a 1st gate insulating film 13 on the surface of the semiconductor substrate 11 in an element formation area, a process for forming a protection film 14 of an inorganic material on the 1st gate insulating film 13, a process for forming a 1st photosensitive etching-resist film 15 on the protection film 14, a process for exposing the 1st gate insulating film 13 in part of the element formation area by etching the protecting film 14 while using the 1st photosensitive etching-resist film 15 as a mask, a process for removing the exposed 1st gate insulating film 13 by using the protection film 14 as a mask, and a process for forming a 1ne gate insulating film on the surface of the exposed semiconductor substrate 11.
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