| 摘要 |
<p>PROBLEM TO BE SOLVED: To enhance process safety by a method wherein a semiconductor layer is structurized by arranging a photosensitive layer, and the structurized photosensitive layer is overlapped on a structurized second conductive layer in at least an active region of a matrix so as to fully cover it. SOLUTION: A layer of first conductivity type is arranged in a glass substrate 4 so as to be structurized as a gate contact 6 and a memory capacitor basic electrode 7. A thin film transistor gate insulator 8 is arranged, and next a semiconductor layer 9 composed of intrinsic amorphous silicon is arranged. N type doping amorphous silicon is arranged in layer order, and next a layer of second conductivity type to be structured as a column of thin film transistors, as drain and source contact 12 of the thin film transistors, and as a memory capacitor corresponding electrode 14 is arranged. The layer of the structurized second conductive layer is further used as a mask for structuring the n type doping amorphous silicon.</p> |
