发明名称 SEMICONDUCTOR NEAR-FIELD LIGHT SOURCE, MANUFACTURE THEREOF AND NEAR-FIELD OPTICAL SYSTEM USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor near-field light source which is highly efficient and can be arrayed and easily fabricated, a method of manufacturing the same and a near-field optical system using the same. SOLUTION: This semiconductor near-field light source has a compound semiconductor layer in a surface emission laser structure 12 on a compound semiconductor substrate 11, a compound semiconductor layer 15 in a trigonal pyramid structure on the compound semiconductor layer surface, and a micro aperture 13 in an oscillated wavelength order or smaller of the surface emission laser in the vicinity of an apex of the trigonal pyramid structure. Light oscillated by the surface emission laser is guided to the micro aperture 13 so that near-field light is generated.
申请公布号 JP2000332354(A) 申请公布日期 2000.11.30
申请号 JP19990142727 申请日期 1999.05.24
申请人 CANON INC 发明人 UCHIDA MAMORU;KURODA AKIRA
分类号 H01L21/027;G03F7/20;G03F7/24;H01S5/028;H01S5/042;H01S5/18;H01S5/183;H01S5/20;(IPC1-7):H01S5/18 主分类号 H01L21/027
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