GROWTH METHOD FOR SEMICONDUCTOR CRYSTAL LAYER

摘要

PROBLEM TO BE SOLVED: To provide a hetero epitaxial growth method for a semiconductor crystal layer which does not cause change in impurity concentration of a substrate or deterioration in crystallinity due to a residue. SOLUTION: After the upper surface of a silicon substrate 10 is thermally treated for purification, semiconductor crystal layers 20 and 21 whose compositions are different from the silicon substrate 10 are epitaxially grown on it. The thermal process is performed in such gas atmosphere as containing silicon which is a component of the silicon substrate 10. The gas atmosphere contains disilane gas.