| 摘要 |
PROBLEM TO BE SOLVED: To obtain a method of manufacturing a semiconductor device, capable of improving the planarity of the recessed bottom surface of a silicon substrate, forming a highly accurate silicon uneven surface pattern, and suppressing the occurrence of pattern defects. SOLUTION: This method of manufacturing a semiconductor device comprises the steps of forming an oxide film 2 on a silicon substrate 1, forming an oxide film pattern 2a using the film 2 by a resist step, effecting a step 4 of epitaxially growing silicon over the entire surface of the substrate 1, removing a polysilicon layer 5 laminated on the film 2a after the step 4, and removing the film 2a, whereby a silicon uneven surface pattern 10a is formed on the surface of the substrate 1.
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