| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device containing an improved method for forming a contact hole in which inclination of the contact hole is suppressed and a film of high reflow properties is applied in an interlayer structure. SOLUTION: A gate electrode 3 and a diffusion interlayer 4 are formed over an Si substrate 1 with a gate oxide film 2 in between. A first insulating film (for example, BPSG film) 5 of high reflow properties is so formed as to cover the entire surface of this structure as an interlayer insulating film. After reflow process and flattening process are performed in this order, a second insulating film 6 is formed on the insulating film 5. This insulating film 6 is, before impurity ion is implanted into a contact hole, so formed as to have a thickness that prevents influence of impurity ion implantation upon the first insulating film 5, and, after the impurity ion implantation, it is made into a thinner film (or may be removed) to eliminate stress on the first insulating film 5 as much as possible.
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