| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having an MOSFET structure that can improve the characteristics of a semiconductor element and can suppress variations of the characteristics. SOLUTION: In a semiconductor element provided with a drain junction region 503 and a source junction region 502 in a semiconductor substrate 501, in which impurity is nearly evenly distributed at a relatively low concentration, a gate insulating film 506 formed on the substrate 501, and a gate region 507 on the film 506, a region 508 in which the impurity is distributed at a relatively high concentration at a depth which practically is equal to the distributed depths of the impurity in the drain and source junctions 503 and 502 is formed between the regions 503 and 502 in the substrate 501.
|
