| 摘要 |
PROBLEM TO BE SOLVED: To form a crystalline semiconductor thin film with improved quality at low temperatures by applying an ion and a radical in a plasma which is generated by performing the discharge decomposition of a feed gas to a substrate that is shielded from a plasma generating part by a catalyst. SOLUTION: A catalyst mesh 5, for shielding a substrate 3 from an electrode 4 for generating plasma, is installed in a vacuum vessel 1. A feed gas is introduced from a gas inlet port 7 into the vacuum vessel 1. Further, by applying a high frequency to the electrode 4 from a high-frequency power supply 6, a plasma is generated at an area to the catalyst mesh 5. The feed gas is thermally decomposed by the plasma, or the decomposed gas is further decomposed by the catalysis operation of the catalyst mesh 5, or a non-decomposed gas is decomposed through catalysis operation, thus improving reactivity on the surface of the substrate 3 and hence forming the crystalline semiconductor thin film with improved crystallizability at low temperatures.
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