SEMI-INSULATING SILICON CARBIDE WITHOUT VANADIUM DOMINATION

摘要

A semi-insulating bulk single crystal of silicon carbide is disclosed that h as a resistivity of at least 5000 .OMEGA.-cm at room temperature and a concentration of deep level trapping elements that is below the amounts that will affect the resistivity of the crystal, preferably below detectable levels. A method of forming the crystal is also disclosed, along with some resulting devices that take advantage of the microwave frequency capabilitie s of devices formed using substrates according to the invention.