| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has dual gate electrodes and prevents deterioration of the current capacity of a transistor, by suppressing the solid phase diffusion of an impurity in a gate insulating film and the decrease of the capacities of the gate electrodes, and a method for manufacturing the device. SOLUTION: In a semiconductor device having dual gate electrodes 17 and 18 and such a structure that an insulating film 9 for preventing diffusion of impurity is formed in the dual gate electrodes 17 and 18, the insulating film 9 is selectively formed only in the electrode 18 having the higher impurity diffusion coefficient. In a method for manufacturing the semiconductor device containing the insulating film 9 for preventing the diffusion of impurity in the dual gate electrodes 17 and 18, the insulating film 9 is selectively formed only in the electrode 18 having the higher impurity diffusion coefficient, by removing the film formed in the electrode 17 having the lower impurity diffusion coefficient for forming the insulating film 9 and leaving the film formed in the electrode 18 having the higher impurity diffusion coefficient for forming the insulating film 9. |
