| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a MOS transistor which can improve characteristic as the switching characteristic, etc., of the device by suppressing an increase in leakage current, the short-channel effect of the device, etc., and a method for manufacturing the device. SOLUTION: A semiconductor device is provided with a semiconductor substrate 10 having a channel forming region, a gate insulating film 25 on the channel forming region of the substrate 10, and a gate electrode 30a formed on the insulating film 25. The semiconductor device is also provided with first impurity regions 11 from on both sides of the gate electrode 30a in the substrate 1, in such a way that the areas 11 are connected to the channel forming region. The depth of the channel forming region from the surface of the substrate 10 is made deeper than those of the impurity areas 11 from the surface of the substrate 10.
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