| 摘要 |
PROBLEM TO BE SOLVED: To suppress variance in transistor characteristics due to the pattern density on a semiconductor substrate. SOLUTION: In addition to a circuit element such as a regular Poly-R12 on the semiconductor substrate 1, a pattern of Poly-R12a as a dummy functional element is arranged on the nearly entire surface in a semiconductor chip. Further, the dummy Poly-R12a is covered with an LP-SiN film 17 so as to suppress variance in resistance due to aluminum covering and variance in transistor characteristics due to the pattern density is reduced. Consequently, the variance in transistor characteristics is eliminated to suppress the influence of the aluminum covering on Poly-R and in an in-wafer temperature difference due to the element density of infrared-ray absorption.
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