发明名称 |
STANDARD CELL, AND SEMICONDUCTOR INTEGRATED DEVICE AND ITS LAYOUT DESIGNING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To control the threshold voltage of a transistor(TR) in a cell when the layout of a semiconductor integrated circuit is designed by a standard cell system. SOLUTION: A pin 23 for an N well area which is not electrically connected to a power line 15 supplying a 1st source potential to the source area of a P channel TR is provided, so a potential different from the source area of the P channel TR can be supplied to the N well area 19 and the threshold voltage can be controlled. Further, a pin 24 for a P well area which is not electrically connected to a ground line 16 supplying a 2nd source potential (ground potential) to the source area of an N channel TR is provided, so a potential different from the source area of the N channel TR can be supplied to the P well area 20 and the threshold voltage can be controlled.
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申请公布号 |
JP2000332118(A) |
申请公布日期 |
2000.11.30 |
申请号 |
JP19990142951 |
申请日期 |
1999.05.24 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
YAMADA AKIHIRO |
分类号 |
H01L21/8238;G06F17/50;H01L21/82;H01L27/092;(IPC1-7):H01L21/82;H01L21/823 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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