| 摘要 |
PROBLEM TO BE SOLVED: To form a crystalline semiconductor thin film of superior quality at a low temperature, at which a low-cost substrate such as glass or the like, can be used by using ions and radicals in a plasma of specific electron density generated by discharge decomposition of a source gas and also by using reaction products generated by a reaction that is different from the discharge decomposition. SOLUTION: A plasma, having an electron density of approximately 1010 to 1013 electrons/cm3 is obtained, by introducing high-frequency power from a high-frequency oscillator 14 to discharge decompose a source gas that is introduced from a gas inlet 17. The plasma reaches a substrate, after touching a heated filament 19. As a result, a semiconductor thin film is deposited on the substrate. In this step, products such as ions and radicals decomposed or excited by the plasma and source gas molecules and atoms that are not decomposed or excited are subjected to composite actions of catalytic reactions, thermionic emission, radiating heat and the like to decompose/re-excite intermediate products exicited/decomposed by the plasma. The active species of atom/ molecule types generated by this process reaches the substrate.
|
