发明名称 FABRICATION OF INTEGRATED CIRCUIT BY SELECTIVE DEPOSITION OF PRECURSOR LIQUID
摘要 <p>A thin film of solid material is selectively formed during fabrication of an integrated circuit by applying a precursor liquid to a substrate having a first surface and a second surface and treating the precursor liquid. The first surface has different physicalproperties than the second surface such that a solid thin film forms on the first surface but does not form on the second surface. The substrate is washed after formation of said solid thin film to remove any residues of said liquid from the second substrate surface.</p>
申请公布号 WO2000072371(A1) 申请公布日期 2000.11.30
申请号 US2000011735 申请日期 2000.04.28
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