| 摘要 |
PROBLEM TO BE SOLVED: To suppress generation of dust by forming successively on a supporting silicon substrate a silicon oxide layer and a resist layer to form a mask for dry etching, and by dry-etching the supporting silicon layer to align it with the opening pattern provided in the mask to remove thereafter the silicon oxide layer. SOLUTION: After laminating successively a silicon oxide layer 14a and a resist layer 14b on the rear surface of an SOI substrate comprising a silicon substrate 11, a silicon oxide layer 12, and a silicon active layer 13, an electron- beam utilizing drafting apparatus is used to form an opening-pattern shape 15 in a portion of the resist layer 14b. By using this as a mask, the silicon oxide layer 14a is wet-etched to form a mask 16 for dry etchings. After dry- etching the supporting silicon substrate 11 while aligning it with the opening pattern 15 formed in the mask 16, the silicon oxide layer 12 is removed to form a structure having an opening between each outer peripheral frame 11b and each pillar 11a and an opening between the pillars 11a. |
