| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve resolutions of all transcribed features in a lithographic method, and realize these improvements simply, at a low cost, by making smaller than at least one of the wavelengths of radiation lights the dimension of a desired pattern, when developing the desired pattern from first and second patterns. SOLUTION: By developing a pattern, a patterned resist layer 36 is obtained. The obtained structure has a hard mask 30 patterned by a first pattern and the resist layer 36 patterned by a second pattern which are formed on a substrate 35. These two patterned layers 30, 36 jointly define a feature 45. This feature 45 has its dimensions smaller than the wavelength of the exposure light. By using the patterned layers 30, 36, the feature 45 is transcribed on the underlaid substrate 35. Normally used etching means are suitable for this purpose. Thereafter, the patterned layers 30, 36 are removed from the substrate 35 having therein the etched feature 45.</p> |
