| 摘要 |
PROBLEM TO BE SOLVED: To provide a flat plate gas introduction device of a CCP(capacity coupling type of plasma) reaction vessel provided with a gas introduction plate of longer life and a higher utilization ratio by suppressing plasma enhancement erosion of a gas introduction hole. SOLUTION: A flat plate gas introduction device 14 provided in a CCP reaction vessel is composed of an upper electrode 17, a gas introduction plate 19 provided with a plurality of gas introduction holes 19a, and gas reservoirs 20 between them. The upper electrode 17 has a plurality of magnets 18 that are placed individually on a lower surface of an upper plate 11, and each of the magnets 18 is made to correspond to each of the gas introduction holes 19a, and placed so that a magnetic axis of the magnet 18 and an axis of the gas introduction hole 19 corresponding thereto are in a straight line. In this structure, erosion accelerated by the plasma generated at both side end parts of the gas introduction hole 19a is prevented.
|
