| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for detecting the end point by which the end point can be securely detected without being affected by an influence of noises even when a low opening is etched. SOLUTION: This method for detecting an end point uses a polychromator 19 to detect an emission spectrum during etching and its end point. Prior to etching of a wafer W, the full spectrum of plasma is successively measured in advance, and the main elements of the emission spectrum are analysed by using the emission intensity of respective total wavelengths in all full spectrums, and then, after the scores of the main elements are obtained per succesively measured full spectrum during actual etching on the basis of the emission intensity of the respective total wavelengths, an end point is detected on the basis of the substantial change of scores of the main elements per full spectrum to be measured successively.
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