| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a thin-film transistor that enables a satisfactory ohmic contact between a source electrode, a drain electrode, and a semiconductor layer. SOLUTION: A first semiconductor layer (n+ a-Si) 6 containing an impurity P is formed on a source electrode 4 and a drain electrode 5, which substantially do not contain oxygen and are made of an MOW alloy. The impurity P contained in the first semiconductor layer is diffused onto an SiO2 substrate 1, the source electrode 4 and the drain electrode 5, subjected to H2 plasma etching, and the first semiconductor layer 6 and regions 8 containing an impurity of the substrate are selectively etched. A second semiconductor a-Si layer 9 is formed on the source electrode 4 and the drain electrode 5, the impurity P contained in the source electrode 4 and the drain electrode 5 is made to diffuse onto the second semiconductor layer, to form ohmic contact layer 11.
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