| 摘要 |
PROBLEM TO BE SOLVED: To enhance the breakdown voltage by a method wherein a groove entering into a stand-like part is provided so as to locate between mutual spaces of end regions of a plurality of electrodes. SOLUTION: A surface of a semiconductor substrate 1 has two source pad stand-like parts 22 and one drain pad stand-like part 23 in addition to a main operating region stand-like part 12. A structure of a semiconductor layer of these additional stand-like parts 22, 23 has the same structure as in the semiconductor layer of the main operating region stand-like part 12. The main operating region stand-like part 12 has a plurality of binding grooves in the outer margin. The groove 20 is entered into a source slit 2a and a drain slit 3a. Namely, a groove 20 is provided in an inlet-like manner in the island-like stand-like part 12, and an interval between the end part of the source slit part 2a and the drain slit part 3a is isolated by the groove 20.
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