| 摘要 |
PROBLEM TO BE SOLVED: To increase dissipation efficiency of heat due to local current concentration. SOLUTION: A pair of pressure welding conductors 5, 6 are pressure-welded to a cathode electrode 2 and an anode electrode 3, which are connected with a semiconductor substrate 1. Around the cathode electrode 2, a gate electrode 4 is formed and covered with an insulating film 7, which is formed as a diamond film or a diamond-like carbon film of superior thermal conductivity.
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