| 摘要 |
PROBLEM TO BE SOLVED: To obtain a plasma uniform over a wide power region. SOLUTION: In a plasma processing device, a plasma processing chamber 26 is provided inside a metal vessel 20, and an object 27 is placed in the plasma processing chamber 26. Micro-waves 32 are introduced in the plasma processing chamber 26, and a magnetic field is formed by a coil 31. So that a plasma is generated by interaction between the magnetic field and the micro-waves. In such a plasma processing device, a circular truncated vacuum vessel 23 of dielectrics is provided, and the plasma processing chamber 26 is formed in the vacuum vessel 23. The top surface 23A of the vacuum vessel 23 is smaller than a cross-sectional area A1 of a top part in the metal vessel 20, and a gap part 25 is formed between the metal vessel 20 and the vacuum vessel 23. As a result the micro-waves are introduced even through the gap part 25. |
