| 摘要 |
PROBLEM TO BE SOLVED: To enable formation of a ferroelectric thin film of a ferroelectric element at a low temperature, and prevent generation of a denatured layer and coarse crystal grains on an electrode interface of the ferroelectric thin film, and deterioration of a circuit formed under a substrate. SOLUTION: In a ferroelectric element having an upper part electrode 40, a ferroelectric thin film 30 and a lower part electrode 20, the thin film 30 is composed of Bi layered perovskite type oxide containing Bi, to which at least one or more kinds of additive element selected from among a group composed of Pb, Sn, In and Tl are added. The thin film 30 is formed in a temperature range from 350 deg.C or higher to 500 deg.C or lower. |
