发明名称 SEMICONDUCTOR WAVELENGTH CONVERSION ELEMENT
摘要 <p>PROBLEM TO BE SOLVED: To provide a semiconductor wavelength conversion element which can operate with a low power and can convert the wavelength into a shorter or longer wavelength region than the wavelength of the incident light. SOLUTION: This semiconductor wavelength conversion element has a multilayered film structure laminated on a semiconductor substrate 1, and is equipped with a means to inject a current to the multilayered film structure (such as an electrode 8) and an active layer which emits light by injection of the current. The active layer consists of a semiconductor quantum fine structure consisting of a quantum wire 4 in which the confinement size of electrons by a semiconductor hetero structure is <=100 nm and the confinement of electrons is performed in two dimensions or more.</p>
申请公布号 JP2000330150(A) 申请公布日期 2000.11.30
申请号 JP19990140764 申请日期 1999.05.20
申请人 NEC CORP 发明人 NISHI KENICHI
分类号 G02F2/02;H01S5/00;H01S5/343;(IPC1-7):G02F2/02 主分类号 G02F2/02
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