| 摘要 |
PROBLEM TO BE SOLVED: To provide an electron beam exposing method for highly precisely correcting the proximity effect of a pattern with the large number of repetition even when a transfer area is large. SOLUTION: In an electron beam exposing method to be used for the manufacture of a semiconductor device, the fluctuation of the pattern dimension of the central part of a plotting pattern formed due to the difference of the density of the plotting pattern is corrected by the adjustment of exposure, and the fluctuation of the pattern dimension of the edge part of the plotting pattern formed due to the difference of the density of the plotting pattern is corrected by an auxiliary exposure pattern 4. The fluctuation correction of the pattern dimension by the adjustment of the exposure and the fluctuation correction of the pattern dimension by the auxiliary exposure pattern is operated by using two or one mask.
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