| 摘要 |
<p>A ferroelectric memory cell (200) for storing information and a method for fabricating the same. The information is stored in the remnant polarization of a ferroelectric dielectric layer by setting the direction of the remnant polarization. The memory cell (200) is designed to store the information at a temperature less than a first temperature. During the fabrication process, the memory cell is subjected to an annealing operation in the presence of hydrogen at a second temperature and a packaging operation at a third temperature. The memory cell includes top and bottom contacts that sandwich the dielectric layer (213) which includes a ferroelectric material having a Curie point greater than the first temperature and less than the second and third temperatures. The dielectric layer (213) is encapsulated in an oxygen impermeable material such that the encapsulating layer (221) prevents oxygen from entering or leaving the dielectric layer (213). The memory cell also includes a hydrogen barrier layer (255) that inhibits the flow of hydrogen to the top and bottom electrodes.</p> |
