| 摘要 |
PROBLEM TO BE SOLVED: To enable preventing change in characteristics of a semiconductor element by relieving mechanical stresses applied to a bump electrode, when it is mounted. SOLUTION: An electrode pad 2, composed of Al is formed on a P-type semiconductor substrate 1, and a MOS transistor 4 is formed on the semiconductor substrate 1 directly below the electrode pad 2 via an interlayer insulating film 3. A stress-relaxing film 9 constituted of a polyimide film is interposed between the interlayer insulating film 3 on the MOS transistor 4 and the electrode pad 2. |
