PATTERN FORMING METHOD FOR SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a pattern forming method for a substrate capable of thoroughly suppressing the occurrence of pattern roughness of nm order and capable of contributing to the remarkable enhancement of characteristics of an element. SOLUTION: This pattern forming method includes at least one step selected from a thin film forming step in which a thin film based on a calix [7] arene compound typified by p-methylheptacetoxycalix [7] arene is formed on a substrate, a latent image forming step in which the desired region of the thin film is irradiated with high-energy beams such as electron beams to form a latent image in the thin film and a pattern forming step in which the thin film is selectively dissolved in a developing solution except the region with the formed thin film to form a pattern. Since the p-methylcalix [7] arene has about 1 nm molecular size and low molecular symmetry, pattern roughness which occurs in the formation of a fine pattern of <=100 nm can be reduced to a very low level.