| 摘要 |
The invention relates to a junction insulated lateral MOSFET for high/low side switches. A p-conductive wall (4) ) between an n- conductive source zone (2) and an n-conductive drain zone (3), together with the source zone (2) and drain zone (3), extend to a p-conductive substrate (1). The source zone (2) and the drain zone (3) are surrounded by a p-conductive area (5).
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