POLYCRYSTALLINE SILICON GERMANIUM FILMS FOR FORMING MICRO-ELECTROMECHANICAL SYSTEMS
摘要
This invention relates to micro-electromechanical systems using silicon-germanium films. The invention features a process for forming a micro-electromechanical system on a substrate. This process includes depositing a sacrificial layer of silicon-germanium onto the substrate; depositing a structural layer of silicon-germanium onto the sacrificial layer, where the germanium content of the sacrificial layer is greater than the germanium content of the structural layer; and removing a portion of the sacrificial layer. A MEMS resonator (105) as seen in figure 1B can be produced by the present invention.
申请公布号
WO0042231(A3)
申请公布日期
2000.11.30
申请号
WO2000US00964
申请日期
2000.01.14
申请人
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA;FRANKE, ANDREA;HOWE, ROGER, T.;KING, TSU-JAE