发明名称 WAFER FOR TEMPERATURE MEASUREMENT
摘要 PROBLEM TO BE SOLVED: To measure surface temperature with good reproducibility, even if a wafer is fixed by an electrostatic chuck by fixing a thermocouple to a surface of a semiconductor wafer and providing an insulation film to the opposite surface of a surface, whereto the thermocouple is fixed. SOLUTION: In a semiconductor wafer 3 for temperature measurement, an oxide film 5, which is an insulator about 1μm thickness, is formed over an entire silicon 4 through thermal oxidation treatment. A silver paste 2 is applied to a surface of such a semiconductor wafer 3, and a thermocouple 1 in metal contact is fixed to three places on a radius by twisting an insulation film of a tip which is peeled in the silver paste 2. Since the oxide film 5 as an insulation film exists on the rear surface of the semiconductor wafer 3, leakage current flowing into the semiconductor wafer 3 is reduced during suction by whatever the electrostatic chuck may be. Therefore, the surface temperature of the semiconductor wafer 3 can be measured with good reproducibility without carrying it as noise on a signal of the thermocouple 1.
申请公布号 JP2000332075(A) 申请公布日期 2000.11.30
申请号 JP19990142796 申请日期 1999.05.24
申请人 HITACHI LTD 发明人 SUGANO SEIICHIRO;TETSUKA TSUTOMU
分类号 G01K1/14;H01L21/66;(IPC1-7):H01L21/66 主分类号 G01K1/14
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