发明名称 THIN-FILM POLYCRYSTALLINE SILICON, SOLAR BATTERY USING THE SAME, AND MANUFACTURE OF THIN-FILM POLYCRYSTALLINE SILICON
摘要 <p>PROBLEM TO BE SOLVED: To provide an inexpensive and highly efficient thin-film polycrystalline silicon solar battery. SOLUTION: A thin-film polycrystalline silicon 8 has a pin structure, wherein a p layer 3 and an (n) layer 5 interpose an (i) layer 4 serving as an electric power generating layer therebetween, the layers 3, 4 and 5 each containing a dopant in a properly controlled amount. An inside electric field is formed in substantially the whole power generating layer (i-layer) 4. As a result, optically generated carries generated by the irradiation of light are separated by a drift, based on the inside electric field spreading over substantially the whole layer 4, and thus the probability of their being recombined together while being entrapped by grain boundaries 6 is reduced. Therefore, even when a solar battery is formed of the silicon 8 having a small crystal grain size, losses at the grain boundaries 6 are reduced, the current that can be collected to the outside application increases, and as well as the open voltage. Hence, the conversion efficiency of the solar battery formed of the thin-film polycrystalline silicon having the small crystal grain size is improved. Furthermore, there is no need to increase the crystal grain size, the fusion and recrystallization step such as by lamp annealing is not necessary, and thus the manufacturing process can be simplified and the cost can be reduced.</p>
申请公布号 JP2000332268(A) 申请公布日期 2000.11.30
申请号 JP19990138127 申请日期 1999.05.19
申请人 MITSUBISHI HEAVY IND LTD 发明人 ISHIDA HIROYUKI;HORIE TETSUHIRO
分类号 H01L31/04;(IPC1-7):H01L31/04 主分类号 H01L31/04
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