| 摘要 |
PROBLEM TO BE SOLVED: To provide a Schottky barrier diode, whose breakdown voltage does not decrease by reducing the thickness of an epitaxial layer, to thereby reduce the forward bias voltage. SOLUTION: This Schottky barrier diode is prepared by forming a polysilicon film 6 on the surface with a 2.0 to 3μm thickness epitaxial layer 2 formed on a first conductivity-type semiconductor substrate 1, and evaporating and diffusing a second conductivity-type impurity from the film 6 to form a 0.2 to 0.5μm thickness annular guard ring layer 4. Then, the film 6 portion formed inward of the inner edge of the layer 4 is removed, and a metallic layer 7, which will become a Schottky metal, is formed in contact with the surface of the layer 2. As a result of this arrangement, the range of a depletion layer will not narrow when the diode is reverse-biased, thereby suppressing reduction in the breakdown voltage. |
