| 摘要 |
PROBLEM TO BE SOLVED: To obtain satisfactory electrical properties, even when a semiconductor device is microfabricated by forming an electrode and a protection film on a semiconductor substrate, and heat-treating the substrate which has no protective film formed on the side surfaces of the electrode. SOLUTION: An n-type impurity is introduced into the prescribed region of a semiconductor substrate 10 to form an n-type active layer 12. Then, a heat-treated protective film 14 is formed over the entire surface of the substrate 10. Then, a photoresist film is formed over the entire surface of the film 14, and this photoresist film is exposed and developed to form an opening 18 in the film 14 and the photoresist mask 16, and then a conducting film 20 is formed in the opening 18. Successively, the mask 16 and the film 20 on the mask 16 are removed to form a gate electrode 22. The resulting substrate 10 is heat- treated in a state without the film 14 being formed on the side surfaces of the electrode 22. |
