| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device by which the reliability of a process as well as the product yield can be improved when forming a wiring and/or a plug using a copper thin film or a silver thin film, in a single damascene process, a dual damascene process, or an embedding plug process. SOLUTION: This manufacturing method includes a step to form a recessed part in an insulation layer 11 after the insulation layer 11 is formed on a substrate 10, a step to form a nearly flat metallic thin film on the insulation layer 11 containing the recessed part, and a step to leave the metallic thin film only inside the recessed part by etchbacking the metallic thin film, and a copper thin film 13 or a silver thin film is used as a metallic film.
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