| 摘要 |
PCT No. PCT/JP98/02197 Sec. 371 Date Dec. 29, 1998 Sec. 102(e) Date Dec. 29, 1998 PCT Filed May 20, 1998 PCT Pub. No. WO98/53125 PCT Pub. Date Nov. 26, 1998According to the present invention, a complex (M) which is formed by growing a polycrystalline beta -SiC plate 2 on the surface of a single crystal alpha -SiC base material 1 by the thermal CVD method is heat-treated at a high temperature of 1,900 to 2,400 DEG C., whereby polycrystals of the polycrystalline cubic beta -SiC plate are transformed into a single crystal, so that the single crystal is oriented in the same direction as the crystal axis of the single crystal alpha -SiC base material and integrated with the single crystal of the single crystal alpha -SiC base material to be largely grown. As a result, single crystal SiC of high quality which has a very reduced number of lattice defects and micropipe defects can be efficiently produced while ensuring a sufficient size in terms of area.
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