| 摘要 |
PROBLEM TO BE SOLVED: To provide a coating liq. for forming an insulating film using a siloxane which can form an insulating film having excellent film characteristics, i.e., an insulating film that can completely fill in a fine groove, can furnish coating thick enough to level out a level difference of a substrate so that uniform (global) flatness is achieved in the whole substrate pattern, and which does not contain water, has a low dielectric const. and is advantageous for high-speed wiring, and a method for forming the insulating film for a semiconductor device. SOLUTION: This coating liq. for forming an insulating film for use in manufacturing a semiconductor device is prepd. by dissolving a methylsiloxane oligomer in a solvent having an org. compd. as the main component, wherein the molar concn. of Si-CH3 in the methylsiloxane oligomer is in the range of 80-130% of the molar concn. of Si in the whole methylsiloxane oligomer and the liq. has a self-fluidizing temp. of 150-300 deg.C. The liq. is used for a method for forming an insulating film for a semiconductor device. |
