Method of fabricating self-aligned capacitor

摘要

A method of fabricating a self-aligned capacitor of a DRAM cell is provided. First, a landing pad and a bit line are formed on a semiconductor substrate. An insulating layer is formed on the landing pad and the bit line. A photoresist layer is formed on the insulating layer and the pattern of the photoresist layer is transferred to the insulating layer. A via hole is formed in the insulating layer using the photoresist layer as a mask to expose the landing pad. Spacers are formed on the sidewalls of the via hole by deposition and self-align etching back. A conductive layer is formed in the via hole. The conductive layer on the insulating layer is removed to form a bottom electrode of a capacitor.