发明名称 |
Method of symmetrically implanted punch-through stopper for a rugged DMOS power device |
摘要 |
A structural enhancement to a conventional DMOS process flow addresses the well-known destructive latch up problem. The additional steps include a symmetric "deep" punch-through stopper implant and additional thermal budget to remove silicon damage and distribute the ionized dopants appropriately. The purpose of the implant is to create a low resistance base region within the parasitic bipolar transistor to prevent the device from activating under high current conditions. In terms of circuit characteristics, the goal is to lower the voltage drop at node Vx in FIG. 1C during avalanche breakdown. This structure also provides a means of suppressing the phenomena of punch-through breakdown which can also lower the device's voltage reading.
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申请公布号 |
US6153473(A) |
申请公布日期 |
2000.11.28 |
申请号 |
US19980170920 |
申请日期 |
1998.10.13 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
CALAFUT, DANIEL S.;SAPP, STEVEN P. |
分类号 |
H01L21/336;H01L29/10;H01L29/78;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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