| 摘要 |
PROBLEM TO BE SOLVED: To obtain a composition for forming a film excellent in dielectric constant characteristic and oxygen plasma ashing resistance, having high surface hardness of the coating film therefrom, and suitable for interlayer insulation films in semiconductor devices or the like. SOLUTION: This composition for forming films is obtained by including (A) a hydrolysis condensate of at least one kind of compound selected from the group consisting of a tetraalkoxysilane compound, trialkoxysilane compound and dialkoxysilane compound, satisfying the formula (1) described below, and (B) a hydrolysis condensate of at least one kind of compound selected from the group consisting of a tetraalkoxysilane compound, trialkoxysilane compound and dialkoxysilane compound, satisfying the formula (2) described below: 0 mol <= the number of moles of (trialkoxysilane compound + dialkoxysilane compound) < the number of moles of (tetraalkoxysilane compound)...(1). 0 mol <= the number of moles of (tetraalkoxysilane compound) < the number of moles of (trialkoxysilane compound + dialkoxysilane compound)...(2).
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