发明名称 Semiconductor memory device of double-data rate mode
摘要 Two data items are simultaneously read from memory cells and are fetched into a bus exchanger. The bus exchanger selects the connection between the memory cells and a first output register and the connection between the memory cells and a second output register, in accordance with prescribed rules. The two data items are output to the first and second output registers, respectively. The first output register comprises a master latch. The second output register comprises a master latch and a slave latch. A multiplexer outputs, as output signals, the data items stored in the first and second output registers. The transistors constituting the second output register have smaller sizes (channel widths) than the transistors constituting the first output register. Since the first output register comprises one master latch only, it is possible to reduce the gate capacitance of the loads driven by the clock signal for controlling both output registers.
申请公布号 US6154393(A) 申请公布日期 2000.11.28
申请号 US19990268688 申请日期 1999.03.16
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 OTSUKA, NOBUAKI;HIRABAYASHI, OSAMU
分类号 G11C11/413;G11C7/00;G11C7/10;G11C7/22;G11C11/407;G11C11/409;(IPC1-7):G11C7/00 主分类号 G11C11/413
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