发明名称 |
Semiconductor device and method for manufacturing the same |
摘要 |
In a DRAM, a plurality of first MOSFETs are formed in a cell region on a semiconductor substrate based on the minimum design rule, and a first gate side-wall having a side-wall insulation film is formed on the side-wall portion of a first gate electrode of each of the first MOSFETs. At least one second MOSFET is formed in a peripheral circuit region on the semiconductor substrate, and a second gate side-wall having side-wall insulation films is formed on the side-wall portion of a second gate electrode of the second MOSFET. Both the first MOSFETs, which is capable of forming a fine contact hole self-aligned with the first gate electrode, and the second MOSFET, which is capable of sufficiently mitigating the parasitic resistance while suppressing the short channel effect, can be formed on the same substrate.
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申请公布号 |
US6153476(A) |
申请公布日期 |
2000.11.28 |
申请号 |
US19980030127 |
申请日期 |
1998.02.25 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
INABA, SATOSHI;OZAKI, TOHRU;KOHYAMA, YUSUKE;SUNOUCHI, KAZUMASA |
分类号 |
H01L21/8234;H01L21/8242;H01L27/04;H01L27/088;H01L27/105;H01L27/108;(IPC1-7):H01L21/823;H01L21/336 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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