发明名称 Method and system for heating semiconductor wafers
摘要 The present disclosure relates to a chemical vapor deposition system including a chemical vapor deposition chamber having a wafer position at which a wafer can be placed during chemical wafer deposition processing, and a source of reactive gases for providing reactive gases to the chemical vapor deposition chamber. This system also includes a coherent radiation source for directing a beam of coherent radiation toward the wafer position, and a shield positioned between the coherent radiation source and the wafer position. This shield is adapted to distribute energy from the beam of coherent radiation across the wafer when the wafer is located at the wafer position.
申请公布号 US6152075(A) 申请公布日期 2000.11.28
申请号 US19980143605 申请日期 1998.08.31
申请人 ADVANCED MICRO DEVICES, INC. 发明人 GARDNER, MARK I.;GILMER, MARK C.
分类号 C23C16/44;C23C16/458;C23C16/46;C23C16/48;C23C16/511;(IPC1-7):C23C16/00 主分类号 C23C16/44
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