发明名称 |
Floating gate engineering to improve tunnel oxide reliability for flash memory devices |
摘要 |
A method of forming floating gate to improve tunnel oxide reliability for flash memory devices. A substrate having a source, drain, and channel regions is provided. A tunnel oxide layer is formed over the substrate. A floating gate is formed over the tunnel oxide and the channel region, the floating gate being multi-layered and having a second layer sandwiched between a first layer and a third layer. The first layer of the floating gate overlying the tunnel oxide layer includes an undoped or lightly doped material. The second layer is highly-doped. The third layer is in direct contact with a dielectric layer, e.g., an oxide-nitride-oxide stack, and is made of an undoped or lightly doped material. A dielectric material is formed over the floating gate and a control gate is formed over the dielectric material.
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申请公布号 |
US6153470(A) |
申请公布日期 |
2000.11.28 |
申请号 |
US19990374059 |
申请日期 |
1999.08.12 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
HE, YUE-SONG;CHANG, KENT K.;HUANG, JIAHUA |
分类号 |
H01L21/28;H01L29/423;H01L29/49;(IPC1-7):H01L21/336;H01L21/823;H01L31/072;H01L29/04;H01L29/72 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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