发明名称 COMPOSITION FOR FORMING FILM AND MATERIAL FOR FORMING INSULATING FILM
摘要 PROBLEM TO BE SOLVED: To improve mechanical strengths of a coating film to enable its formation having uniform thickness, hardly to generate cracks and to have a low dielectric constant by including a hydrolytic condensation product of two silane compounds. SOLUTION: A composition for forming a film is obtained by including a hydrolytic condensation product of (A) 100 pts.wt. (conversion into the fully hydrolytic condensation product) of a silane compound of the formula: (R1)aSi(OR2)4-a and 4-200 pts.wt. (conversion into the fully hydrolytic condensation product) of a silane compound of the formula: (R3)bSi(OR4)4-b. In the formulas, R1 is a monovalent group selected from methyl, ethyl, vinyl and phenyl; a is 0-2; R3 is a 4 or more C straight chain alkyl, branched chain alkyl or alicyclic alkyl; R4 is a monovalent organic group; and b is 1-2. The hydrolytic condensation product is obtained by hydrolyzing and/or condensing the components A and B under the presence of a catalyst and water in an organic solvent.
申请公布号 JP2000328004(A) 申请公布日期 2000.11.28
申请号 JP19990140923 申请日期 1999.05.21
申请人 JSR CORP 发明人 NISHIKAWA MICHINORI;TSUNODA MAYUMI;SHINODA TOMOTAKA;YAMADA KINJI
分类号 H01L21/312;C08G77/04;C09D5/25;C09D183/06;(IPC1-7):C09D183/06 主分类号 H01L21/312
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