发明名称 |
Method of manufacturing semiconductor device |
摘要 |
A catalyst element for accelerating crystallization is added to an amorphous silicon film containing an impurity element for threshold voltage control, and a heat treatment is then performed to obtain a crystalline silicon film. Thereafter, the catalyst element is gettered by performing a heat treatment in an atmosphere containing a halogen element. In this step, a chemical equilibrium state is established for the impurity element for threshold voltage control by mixing a compound gas containing the impurity element into the atmosphere, thereby preventing the impurity element from escaping into the vapor phase.
|
申请公布号 |
US6153445(A) |
申请公布日期 |
2000.11.28 |
申请号 |
US19980025582 |
申请日期 |
1998.02.18 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI, SHUNPEI;OHTANI, HISASHI |
分类号 |
H01L21/205;G02F1/1362;H01L21/20;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/205 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|