| 发明名称 |
Method for fabricating LOCOS isolation having a planar surface which includes having the polish stop layer at a lower level than the LOCOS formation |
| 摘要 |
A method for fabricating LOCOS isolation having a planar surface. The method utilizes a polysilicon spacer to prevent bird beak. The method adds the steps of forming a polishing stop layer and removing said edge-protrusion portion of the local oxide by chemical mechanical polishing.
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| 申请公布号 |
US6153482(A) |
申请公布日期 |
2000.11.28 |
| 申请号 |
US19980174091 |
申请日期 |
1998.10.16 |
| 申请人 |
NANYA TECHNOLOGY CORP. |
发明人 |
SU, LIN-CHIN;TSAI, TZU-CHING;JIANG, MIIN-JIUNN;LIAO, HUNG-CHANG;WANG, JIM;LIN, CHUNG MIN |
| 分类号 |
H01L21/762;(IPC1-7):H01L21/331;H01L21/302;H01L21/76 |
主分类号 |
H01L21/762 |
| 代理机构 |
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