| 摘要 |
PROBLEM TO BE SOLVED: To improve the control of a flow of a process material to a deposition system without adding complication by arranging an injection valve communicating a fluid at a deposition chamber. SOLUTION: A precursory material such as liq. cuproselect is supplied to an injection vaporizer 210 from a process material source such as an ampule 232. The injection vaporizer 210 is provided with a liq. injection valve of solenoid driving, an inlet of the precursory material, an evaporator and a gas [B] port of carrier gas [B] supplied from a carrier gas source 242. It is arranged closely to a chamber 200 and is communicated with a shower head 208 arranged therein. The injection evaporator 210 controls the flow of a mixture of the precursory material-carrier gas to the chamber 200, atomizes the liq. precursory material into fine mist and evaporates it. By the arrangement of the injection evaporator 210 closer to the chamber, there is no need of moving the generated vapor over the long distance, the plating and clogging of a moving duct line are reduced, and moreover, the possibility of a pressure gradient is reduced.
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